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sram mt5c1009 austin semiconductor, inc. mt5c1009 rev. 5.0 2/01 austin semiconductor, inc. reserves the right to change products or specifications without notice. 1 features ? access times: 15, 20, 25, 35, 45, 55 and 70 ns ? battery backup: 2v data retention ? low power standby ? high-performance, low-power cmos process ? single +5v ( +10%) power supply ? easy memory expansion with ce\ and oe\ options. ? all inputs and outputs are ttl compatible options marking ? timing 15ns access -15 20ns access -20 25ns access -25 35ns access -35 45ns access -45 55ns access -55* 70ns access -70* ? package(s) ? ceramic dip (400 mil) c no. 111 ceramic dip (600 mil) cw no. 112 ceramic lcc ec no. 207 ceramic lcc eca no. 208 ceramic flatpack f no. 303 ceramic soj dcj no. 501 ceramic soj soj no. 507 ? 2v data retention/low power l ? radiation tolerant (epi) e *electrical characteristics identical to those provided for the 45ns access devices. pin assignment (top view) available as military specifications ?smd 5962-89598 ?mil-std-883 nc 1 32 v cc a16 2 31 a15 a14 3 30 ce2 a12 4 29 we\ a7 5 28 a13 a6 6 27 a8 a5 7 26 a9 a4 8 25 a11 a3 9 24 oe\ a2 10 23 a10 a1 11 22 ce\ a0 12 21 dq8 dq1 13 20 dq7 dq2 14 19 dq6 dq3 15 18 dq5 v ss 16 17 dq4 nc 1 32 v cc a16 2 31 a15 a14 3 30 ce2 a12 4 29 we\ a7 5 28 a13 a6 6 27 a8 a5 7 26 a9 a4 8 25 a11 a3 9 24 oe\ a2 10 23 a10 a1 11 22 ce\ a0 12 21 dq8 dq1 13 20 dq7 dq2 14 19 dq6 dq3 15 18 dq5 v ss 16 17 dq4 nc 1 32 v cc a16 2 31 a15 a14 3 30 ce2 a12 4 29 we\ a7 5 28 a13 a6 6 27 a8 a5 7 26 a9 a4 8 25 a11 a3 9 24 oe\ a2 10 23 a10 a1 11 22 ce\ a0 12 21 dq8 dq1 13 20 dq7 dq2 14 19 dq6 dq3 15 18 dq5 v ss 16 17 dq4 32-pin dip (c, cw) 32-pin soj (soj) 32-pin lcc (ec) 32-pin soj (dcj) 32-pin flat pack (f) 32-pin lcc (eca) general description the mt5c1009 is a 1,048,576-bit high-speed cmos static ram organized as 131,072 words by 8 bits. this device uses 8 common input and output lines and has an output en- able pin which operate faster than address access times during read cycle. for design flexibility in high-speed memory applications, this device offers chip enable (ce\) and output enable (oe\) features. these enhancements can place the out- puts in high-z for additional flexibility in system design. writing to these devices is accomplished when write enable (we\) and ce\ inputs are both low. reading is accom- plished when we\ remains high and ce\ and oe\ go low. the devices offer a reduced power standby mode when dis- abled, allowing system designs to achieve low standby power requirements. the l version offers a 2v data retention mode, re- ducing current consumption to 2mw maximum. all devices operate from a single +5v power supply and all inputs and outputs are fully ttl compatible. it is par- ticularly well suited for use in high-density, high-speed system applications. 128k x 8 sram with chip & output enable for more products and information please visit our web site at www.austinsemiconductor.com 4 3 2 1 32 31 30 a12 a14 a10 nc v cc a15 ce2 14 15 16 17 18 19 20 dq2 dq3 v ss dq4 dq5 dq6 dq7 5 6 7 8 9 10 11 12 13 a7 a6 a5 a4 a3 a2 a1 a0 dq1 29 28 27 26 25 24 23 22 21 we a13 a8 a9 a11 oe a10 ce1 dq8 \ \ \ 6 nc nc nc nc
sram mt5c1009 austin semiconductor, inc. mt5c1009 rev. 5.0 2/01 austin semiconductor, inc. reserves the right to change products or specifications without notice. 2 functional block diagram note: the two least significant row address bits (a8 and a6) are encoded using gray code. truth table row decoder 262,144-bit memory array i/o control v cc gnd d q 8 d q 1 ce\ oe\ we\ a 0 a 1 a 2 a 3 a 4 a 5 a 6 a 7 a 12 column decoder a 8 a 9 a 10 a 11 a 13 a 14 a 15 a 16 power down ce\ we\ oe\ mode i/o pin supply current h x x not selected high-z i sbt2 , i sbc2 x x x not selected high-z i sbt2 , i sbc2 l h h output disable high-z i cc l h l read d out i cc l l x write d in i cc
sram mt5c1009 austin semiconductor, inc. mt5c1009 rev. 5.0 2/01 austin semiconductor, inc. reserves the right to change products or specifications without notice. 3 absolute maximum ratings* supply voltage range (vcc).............................-0.5v to +6.0v storage temperature......................................-65 c to +150 c short circuit output current (per i/o).......................20ma voltage on any pin relative to vss..................-0.5v to +7.0v max junction temperature**.......................................+150 c power dissipation ...............................................................1 w *stresses at or greater than those listed under "absolute maxi- mum ratings" may cause permanent damage to the device. this is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operation section of this specification is not implied. exposure to absolute maximum rating conditions for extended periods will affect reliability. refer to page 17 of this datasheet for a technical note on this subject. ** junction temperature depends upon package type, cycle time, loading, ambient temperature and airflow, and humidity. electrical characteristics and recommended dc operating conditions (-55 o c < t c < 125 o c & -45 o c to +85 o c; v cc = 5.0v +10%) capacitance sym -15 -20 -25 -35 -45 units notes i ccsp 250 140 140 135 125 ma 3 i cclp 250 140 130 125 115 ma power supply current: standby i sbt 25 25 25 25 25 ma i sbcsp 10 10 10 10 10 ma i sbclp 10 10 10 10 10 ma max conditions ce\ > v cc -0.2v; v cc = max inputs = v ih or v il f = 0 hz parameter power supply current: operating ce\ < v il ; oe\ = we\ = v ih , v cc = max, f = max = 1/t rc (min) output open (1) l version only ce\ > v ih ; all other inputs < v il or > v ih , v cc = max f = 0 hz description conditions sym min max units notes input high (logic 1) voltage v ih 2.2 v cc +0.5 v1 input low (logic 0) voltage v il -0.5 0.8 v 1, 2 input leakage current 0v< v in < v cc il i -10 10 a output leakage current output(s) disabled 0v< v out < v cc il o -10 10 a output high voltage i oh =-4.0ma v oh 2.4 v 1 output low voltage i ol =8.0ma v ol 0.4 v 1 description conditions sym max units notes input capacitance (a0-a16) c i 12 pf 4 output capacitance c o 20 pf 4 input capacitance (ce\, we\, oe\) c i 14 pf 4 t a = 25 o c, f = 1mhz v cc = 5v
sram mt5c1009 austin semiconductor, inc. mt5c1009 rev. 5.0 2/01 austin semiconductor, inc. reserves the right to change products or specifications without notice. 4 electrical characteristics and recommended ac operating conditions (note 5) (-55 o c < t c < 125 o c & -40 o c to +85 o c; v cc = 5.0v +10%) min max min max min max min max min max units notes read cycle read cycle time t rc 15 20 25 35 45 ns address access time t aa 15 20 25 35 45 ns chip enable access time t ace 15 20 25 35 45 ns output hold from address change t oh 33333 ns chip enable to output in low-z t lzce 33333 ns4, 6, 7 chip disable to output in high-z t hzce 7 8 10 15 20 ns 4, 6, 7 output enable access time t aoe 7 6 10 15 20 ns output enable to output in low-z t lzoe 00000 ns4, 6, 7 output disable to output in high-z t hzoe 7 6 10 15 20 ns 4, 6, 7 write cycle write cycle time t wc 15 20 25 35 45 ns chip enable to end of write t cw 12 12 20 25 35 ns address valid to end of write t aw 12 12 20 25 35 ns address setup time t as 00000 ns address hold from end of write t ah 00000 ns write pulse width (oe high) t wp 12 12 20 25 35 ns data setup time t ds 8 10152020 ns data hold time t dh 00000 ns write disable to output in low-z t lzwe 55555 ns4, 6, 7 write enable to output in high-z t hzwe 7 9 10 15 20 ns 4, 6, 7 -25 -35 -45 description -15 -20 symbol
sram mt5c1009 austin semiconductor, inc. mt5c1009 rev. 5.0 2/01 austin semiconductor, inc. reserves the right to change products or specifications without notice. 5 ac test conditions input pulse levels ................................... vss to 3.0v input rise and fall times ....................................... 5ns input timing reference levels ............................. 1.5v output reference levels ..................................... 1.5v output load .............................. see figures 1 and 2 notes 1. all voltages referenced to v ss (gnd). 2. -2v for pulse width < 20ns 3. i cc is dependent on output loading and cycle rates. the specified value applies with the outputs unloaded, and f = 1 hz. t rc (min) 4. this parameter is guaranteed but not tested. 5. test conditions as specified with the output loading as shown in fig. 1 unless otherwise noted. 6. t lzce, t lzwe, t lzoe, t hzce, t hzoe and t hzwe are specified with cl = 5pf as in fig. 2. transition is measured 200mv typical from steady state voltage, allowing for actual tester rc time constant. 7. at any given temperature and voltage condition, t hzce is less than t lzce, and t hzwe is less than t lzwe and t hzoe is less than t lzoe. 8. we\ is high for read cycle. 9. device is continuously selected. chip enables and output enables are held in their active state. 10. address valid prior to, or coincident with, latest occurring chip enable. 11. t rc = read cycle time. fig. 1 output load equivalent fig. 2 output load equivalent data retention electrical characteristics (l version only) +5v q 255 30 480 5 pf +5v q 255 480 123 1 2 3 1 2 3 123 1 23 4 1 23 4 1 23 4 1234 dont care undefined low vcc data retention waveform description symbol min max units notes v cc for retention data v dr 2 --- v i ccdr1 * 0.75 ma i ccdr2 1.0 ma chip deselect to data retention time t cdr 0 --- ns 4 operation recovery time t r t rc ns 4, 11 data retention current ce\ > (v cc - 0.2v) v in > (v cc - 0.2v) or < 0.2v v cc = 2v conditions 12345678 12345678 12345678 12345678 12345678 123 1 2 3 1 2 3 1 2 3 123 1234 1 23 4 1 23 4 1 23 4 123456789 123456789 123456789 123456789 123456789 123 1 2 3 1 2 3 1 2 3 123 1234 1 23 4 1 23 4 1 23 4 data retention mode v dr > 2v 4.5v 4.5v v dr t cdr t r v ih v il v cc ce1\ * low power, -20 device only
sram mt5c1009 austin semiconductor, inc. mt5c1009 rev. 5.0 2/01 austin semiconductor, inc. reserves the right to change products or specifications without notice. 6 taa toh trc trc previous data valid valid data valid address dq tpd tpu thzce tace tlzce thzoe tlzoe taoe trc trc data valid ce\ oe\ dq icc read cycle no. 1 8, 9 read cycle no. 2 7, 8, 10, 12 t rc t aa t oh t rc t aoe t lzoe t lzce t ace t pu t hzoe t hzce t pd
sram mt5c1009 austin semiconductor, inc. mt5c1009 rev. 5.0 2/01 austin semiconductor, inc. reserves the right to change products or specifications without notice. 7 write cycle no. 1 12, 13 (chip enabled controlled) write cycle no. 2 7, 12, 13 (write enabled controlled) tdh tds twp1 twp1 tah tcw taw tcw tas twc twc high z data vaild address ce\ we\ d q tdh twp1 twp1 tas taw tcw tah tcw twc twc data valid address ce\ we\ d q high-z note: output enable (oe\) is inactive (high). t wc t aw t as t cw t ah t wp1 t ds t dh t wc t aw t cw t as t wp1 t ah t dh
sram mt5c1009 austin semiconductor, inc. mt5c1009 rev. 5.0 2/01 austin semiconductor, inc. reserves the right to change products or specifications without notice. 8 mechanical definitions* asi case #111 (package designator c) smd 5962-89598, case outline z *all measurements are in inches. d s1 pin 1 se b b1 a s2 q l l1 min max a --- 0.232 b 0.014 0.023 b1 0.038 0.065 c 0.008 0.015 d --- 1.700 e 0.350 0.405 e1 0.390 0.420 e l 0.125 0.200 l1 0.150 --- q 0.015 0.060 s --- 0.100 s1 0.005 --- s2 0.005 --- note: symbol 0.100 bsc smd specifications either configuration in detail a is allowed on smd. c note e 0 o to 15 o e1
sram mt5c1009 austin semiconductor, inc. mt5c1009 rev. 5.0 2/01 austin semiconductor, inc. reserves the right to change products or specifications without notice. 9 asi case #112 (package designator cw) smd 5962-89598, case outline x mechanical definitions* e b b2 q l a d pin 1 e ea c *all measurements are in inches. min max a 0.089 0.111 b 0.016 0.020 b2 0.045 0.050 c 0.009 0.011 d 1.585 1.615 e 0.585 0.605 ea e q 0.040 0.060 l 0.125 0.175 symbol smd specifications 0.600 bsc 0.100 bsc
sram mt5c1009 austin semiconductor, inc. mt5c1009 rev. 5.0 2/01 austin semiconductor, inc. reserves the right to change products or specifications without notice. 10 mechanical definitions* asi case #207 (package designator ec) smd 5962-89598, case outline u *all measurements are in inches. b1 l2 detail a a b2 min max a 0.080 0.100 b 0.022 0.028 b1 0.006 0.022 b2 0.040 --- d 0.800 0.840 e 0.392 0.408 e h l 0.070 0.080 l1 0.090 0.110 l2 0.003 0.015 symbol 0.012 ref smd specifications 0.050 bsc d e see detail a l1 l e b h x 45 o
sram mt5c1009 austin semiconductor, inc. mt5c1009 rev. 5.0 2/01 austin semiconductor, inc. reserves the right to change products or specifications without notice. 11 asi case #208 (package designator eca) smd 5962-89598, case outline m mechanical definitions* *all measurements are in inches. e d b1 detail a a b2 e1 l1 b1 d1 l see detail a e min max a 0.060 0.080 b1 0.022 0.028 b1 0.004 0.014 b2 0.040 0.050 d 0.442 0.458 d1 e 0.540 0.560 e1 e l 0.045 0.055 l1 0.075 0.095 0.050 bsc symbol smd specifications 0.300 bsc 0.400 bsc
sram mt5c1009 austin semiconductor, inc. mt5c1009 rev. 5.0 2/01 austin semiconductor, inc. reserves the right to change products or specifications without notice. 12 mechanical definitions* asi case #303 (package designator f) smd 5962-89598, case outline t *all measurements are in inches. c e2 a q e3 min max a 0.097 0.125 b 0.015 0.019 c 0.003 0.009 d --- 0.830 e 0.400 0.420 e1 --- 0.450 e2 0.180 --- e3 0.030 --- e l 0.250 0.370 q 0.026 0.045 s --- 0.045 s1 0.000 --- symbol smd specifications 0.050 bsc pin 1 index 32 17 16 1 bottom view d e l e b top view e1 s1 s
sram mt5c1009 austin semiconductor, inc. mt5c1009 rev. 5.0 2/01 austin semiconductor, inc. reserves the right to change products or specifications without notice. 13 *all measurements are in inches. asi case #501 (package designator dcj) smd 5962-89598, case outline 7 mechanical definitions* min max a 0.135 0.144 a2 0.026 0.036 b1 0.030 0.040 b 0.015 0.019 d 0.812 0.828 d1 0.740 0.755 e 0.405 0.415 e1 0.435 0.445 e2 0.360 0.380 e symbol smd specifications 0.050 bsc a a2 e b d e d1 e1 e2 b1
sram mt5c1009 austin semiconductor, inc. mt5c1009 rev. 5.0 2/01 austin semiconductor, inc. reserves the right to change products or specifications without notice. 14 *all measurements are in inches. asi case #507 (package designator soj) smd 5962-89598, case outline y mechanical definitions* s e a a1 1234567890123456789012345 1 23456789012345678901234 5 1 23456789012345678901234 5 1 23456789012345678901234 5 1234567890123456789012345 e2 b b2 b1 min max a 0.120 0.165 a1 0.088 0.120 a2 b b1 b2 b3 0.025 0.045 d 0.816 0.838 d1 e 0.419 0.431 e1 0.430 0.445 e2 0.360 0.380 e e1 e2 0.005 j s 0.030 0.040 s1 0.038 typ 0.005 typ 0.020 typ symbol smd specifications 0.050 bsc 0.070 ref 0.010 ref .030r typ 0.020 ref 0.75 ref 123 1 2 3 123 123 1 2 3 123 e 1 a2 e 2 s1 b3 base plane seating plane d e d1 j 32 1 17 16 e1 see detail a detail a
sram mt5c1009 austin semiconductor, inc. mt5c1009 rev. 5.0 2/01 austin semiconductor, inc. reserves the right to change products or specifications without notice. 15 *available processes it = industrial temperature range -40 o c to +85 o c xt = extended temperature range -55 o c to +125 o c 883c = full military processing -55 o c to +125 o c ** options l = 2v data retention, low power standby e = radiation tolerant ordering information example: mt5c1009cw-20le/883c device number package type speed ns options** process device number package type speed ns options** process mt5c1009 mt5c1009 c c -15 -15 e l /* /* mt5c1009 mt5c1009 cw cw -15 -15 e l /* /* mt5c1009 mt5c1009 c c -20 -20 e l /* /* mt5c1009 mt5c1009 cw cw -20 -20 e l /* /* mt5c1009 mt5c1009 c c -25 -25 e l /* /* mt5c1009 mt5c1009 cw cw -25 -25 e l /* /* mt5c1009 mt5c1009 c c -35 -35 e l /* /* mt5c1009 mt5c1009 cw cw -35 -35 e l /* /* mt5c1009 mt5c1009 c c -45 -45 e l /* /* mt5c1009 mt5c1009 cw cw -45 -45 e l /* /* mt5c1009 mt5c1009 c c -55 -55 e l /* /* mt5c1009 mt5c1009 cw cw -55 -55 e l /* /* mt5c1009 mt5c1009 c c -70 -70 e l /* /* mt5c1009 mt5c1009 cw cw -70 -70 e l /* /* example: mt5c1009eca-55/xt device number package type speed ns options** process device number package type speed ns options** process mt5c1009 mt5c1009 ec ec -15 -15 e l /* /* mt5c1009 mt5c1009 eca eca -15 -15 e l /* /* mt5c1009 mt5c1009 ec ec -20 -20 e l /* /* mt5c1009 mt5c1009 eca eca -20 -20 e l /* /* mt5c1009 mt5c1009 ec ec -25 -25 e l /* /* mt5c1009 mt5c1009 eca eca -25 -25 e l /* /* mt5c1009 mt5c1009 ec ec -35 -35 e l /* /* mt5c1009 mt5c1009 eca eca -35 -35 e l /* /* mt5c1009 mt5c1009 ec ec -45 -45 e l /* /* mt5c1009 mt5c1009 eca eca -45 -45 e l /* /* mt5c1009 mt5c1009 ec ec -55 -55 e l /* /* mt5c1009 mt5c1009 eca eca -55 -55 e l /* /* mt5c1009 mt5c1009 ec ec -70 -70 e l /* /* mt5c1009 mt5c1009 eca eca -70 -70 e l /* /* example: mt5c1009dcj-35le/883c device number package t yp e speed ns options** process device number package t yp e speed ns options** process mt5c1009 mt5c1009 f f -15 -15 e l /* /* mt5c1009 mt5c1009 dcj dcj -15 -15 e l /* /* mt5c1009 mt5c1009 f f -20 -20 e l /* /* mt5c1009 mt5c1009 dcj dcj -20 -20 e l /* /* mt5c1009 mt5c1009 f f -25 -25 e l /* /* mt5c1009 mt5c1009 dcj dcj -25 -25 e l /* /* mt5c1009 mt5c1009 f f -35 -35 e l /* /* mt5c1009 mt5c1009 dcj dcj -35 -35 e l /* /* mt5c1009 mt5c1009 f f -45 -45 e l /* /* mt5c1009 mt5c1009 dcj dcj -45 -45 e l /* /* mt5c1009 mt5c1009 f f -55 -55 e l /* /* mt5c1009 mt5c1009 dcj dcj -55 -55 e l /* /* mt5c1009 mt5c1009 f f -70 -70 e l /* /* mt5c1009 mt5c1009 dcj dcj -70 -70 e l /* /* device number package t yp e speed ns options** process mt5c1009 mt5c1009 soj soj -15 -15 e l /* /* mt5c1009 mt5c1009 soj soj -20 -20 e l /* /* mt5c1009 mt5c1009 soj soj -25 -25 e l /* /* mt5c1009 mt5c1009 soj soj -35 -35 e l /* /* mt5c1009 mt5c1009 soj soj -45 -45 e l /* /* mt5c1009 mt5c1009 soj soj -55 -55 e l /* /* mt5c1009 mt5c1009 soj soj -70 -70 e l /* /* example: mt5c1009f-70l/it example: mt5c1009c-25e/xt example: mt5c1009ec-45l/it example: mt5c1009soj-25/it
sram mt5c1009 austin semiconductor, inc. mt5c1009 rev. 5.0 2/01 austin semiconductor, inc. reserves the right to change products or specifications without notice. 16 asi to dscc part number cross reference asi package designator ec & eca asi part # smd part # mt5c1009ec-20/883c 5962-8959839mua mt5c1009ec-20l/883c 5962-8959840mua mt5c1009ec-25l/883c 5962-8959812mua mt5c1009ec-25/883c 5962-8959829mua mt5c1009ec-35l/883c 5962-8959811mua mt5c1009ec-35/883c 5962-8959828mua mt5c1009ec-45l/883c 5962-8959810mua mt5c1009ec-45/883c 5962-8959827mua mt5c1009ec-55l/883c 5962-8959809mua mt5c1009ec-55/883c 5962-8959826mua mt5c1009ec-70l/883c 5962-8959808mua mt5c1009ec-70/883c 5962-8959825mua mt5c1009eca-20/883c 5962-8959839mma mt5c1009eca-20l/883c 5962-8959840mma mt5c1009eca-25l/883c 5962-8959812mma mt5c1009eca-25/883c 5962-8959829mma mt5c1009eca-35l/883c 5962-8959811mma mt5c1009eca-35/883c 5962-8959828mma mt5c1009eca-45l/883c 5962-8959810mma mt5c1009eca-45/883c 5962-8959827mma mt5c1009eca-55l/883c 5962-8959809mma mt5c1009eca-55/883c 5962-8959826mma mt5c1009eca-70l/883c 5962-8959808mma mt5c1009eca-70/883c 5962-8959825mma asi package designator c & cw asi part # smd part # mt5c1009c-20/883c 5962-8959839mza mt5c1009c-20l/883c 5962-8959840mza mt5c1009c-25l/883c 5962-8959812mza mt5c1009c-25/883c 5962-8959829mza mt5c1009c-35l/883c 5962-8959811mza mt5c1009c-35/883c 5962-8959828mza mt5c1009c-45l/883c 5962-8959810mza mt5c1009c-45/883c 5962-8959827mza mt5c1009c-55l/883c 5962-8959809mza mt5c1009c-55/883c 5962-8959826mza mt5c1009c-70l/883c 5962-8959808mza mt5c1009c-70/883c 5962-8959825mza mt5c1009cw-20/883c 5962-8959839mxa mt5c1009cw-20l/883c 5962-8959840mxa mt5c1009cw-25l/883c 5962-8959812mxa mt5c1009cw-25/883c 5962-8959829mxa mt5c1009cw-35l/883c 5962-8959811mxa mt5c1009cw-35/883c 5962-8959828mxa mt5c1009cw-45l/883c 5962-8959810mxa mt5c1009cw-45/883c 5962-8959827mxa mt5c1009cw-55l/883c 5962-8959809mxa mt5c1009cw-55/883c 5962-8959826mxa mt5c1009cw-70l/883c 5962-8959808mxa mt5c1009cw-70/883c 5962-8959825mxa asi package designator dcj asi part # smd part # mt5c1009dcj-20/883c 5962-8959839m7a mt5c1009dcj-20l/883c 5962-8959840m7a mt5c1009dcj-25l/883c 5962-8959812m7a mt5c1009dcj-25/883c 5962-8959829m7a mt5c1009dcj-35l/883c 5962-8959811m7a mt5c1009dcj-35/883c 5962-8959828m7a mt5c1009dcj-45l/883c 5962-8959810m7a mt5c1009dcj-45/883c 5962-8959827m7a mt5c1009dcj-55l/883c 5962-8959809m7a mt5c1009dcj-55/883c 5962-8959826m7a mt5c1009dcj-70l/883c 5962-8959808m7a mt5c1009dcj-70/883c 5962-8959825m7a asi package designator f asi part # smd part # mt5c1009f-20/883c 5962-8959839mta mt5c1009f-20l/883c 5962-8959840mta mt5c1009f-25l/883c 5962-8959812mta mt5c1009f-25/883c 5962-8959829mta mt5c1009f-35l/883c 5962-8959811mta mt5c1009f-35/883c 5962-8959828mta mt5c1009f-45l/883c 5962-8959810mta mt5c1009f-45/883c 5962-8959827mta mt5c1009f-55l/883c 5962-8959809mta mt5c1009f-55/883c 5962-8959826mta mt5c1009f-70l/883c 5962-8959808mta mt5c1009f-70/883c 5962-8959825mta * asi part number is for reference only. orders received referencing the smd part number will be processed per the smd. asi package designator soj asi part # smd part # mt5c1009soj-20/883c 5962-8959839m7a mt5c1009soj-20l/883c 5962-8959840m7a mt5c1009soj-25l/883c 5962-8959812m7a mt5c1009soj-25/883c 5962-8959829m7a mt5c1009soj-35l/883c 5962-8959811m7a mt5c1009soj-35/883c 5962-8959828m7a mt5c1009soj-45l/883c 5962-8959810m7a mt5c1009soj-45/883c 5962-8959827m7a mt5c1009soj-55l/883c 5962-8959809m7a mt5c1009soj-55/883c 5962-8959826m7a mt5c1009soj-70l/883c 5962-8959808m7a mt5c1009soj-70/883c 5962-8959825m7a
sram mt5c1009 austin semiconductor, inc. mt5c1009 rev. 5.0 2/01 austin semiconductor, inc. reserves the right to change products or specifications without notice. 17 date: 2/6/01 t ec hnical note: 128kx8 sram C maximum recommended supply voltage and ambient temperature compliance: this product fully meets and is tested in compliance with smd# 5962-89598 and tested in accordance with jesd78. specific product affected: die manufacturer: alliance semiconductor corporation die name: as2008sa device types: mt5c1008 , mt5c1009 speed grades: all package designators: all identifying date code marking: change implemented on product starting with date code 0100. characteristic identified: austin semiconductor, inc. has received notification from this die vendor, alliance semiconductor corp., that operation at high vccs of 6 volts and beyond may result in a latch-up condition. this can cause permanent damage to the device. recommendation: during use in system applications and during manufacturing processes, including burn-in and test, the devices should not be subjected to vcc supply voltages higher than 5.5volts at 125c.

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